GP3T016A120H

GP3T016A120H

Part Number: GP3T016A120H
Product Classification: Single FETs, MOSFETs
Manufacturer: SemiQ
Description: GEN3 1200V, 16M SIC MOSFET, TO-2
Packaging: Tube
ROHS Status: Yes
Currency: -
PDF: Documents

Specification

  • Mounting Type Through Hole
  • Part Status Active
  • FET Type N-Channel
  • FET Feature -
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Grade -
  • Qualification -
  • Drain to Source Voltage (Vdss) 1200 V
  • Package / Case TO-247-4
  • Current - Continuous Drain (Id) @ 25°C 132A (Tc)
  • Vgs(th) (Max) @ Id 4V @ 20mA
  • Technology SiC (Silicon Carbide Junction Transistor)
  • Drive Voltage (Max Rds On, Min Rds On) 18V
  • Supplier Device Package TO-247-4
  • Vgs (Max) +22V, -8V
  • Rds On (Max) @ Id, Vgs 23mOhm @ 50A, 18V
  • Gate Charge (Qg) (Max) @ Vgs 260 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds 6779 pF @ 1000 V
  • Power Dissipation (Max) 484W (Tc)