GCMX040C120S1-E1
Part Number:
GCMX040C120S1-E1
Product Classification:
Single FETs, MOSFETs
Manufacturer:
SemiQ
Description:
GEN3 1200V 40M SIC MOSFET MODULE
Packaging:
Tube
ROHS Status:
Yes
Currency:
-
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Chassis Mount
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade -
- Qualification -
- Package / Case SOT-227-4, miniBLOC
- Current - Continuous Drain (Id) @ 25°C 53A (Tc)
- Supplier Device Package SOT-227
- Drain to Source Voltage (Vdss) 1200 V
- Power Dissipation (Max) 183W (Tc)
- Vgs(th) (Max) @ Id 4V @ 10mA
- Technology SiCFET (Silicon Carbide)
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Rds On (Max) @ Id, Vgs 52mOhm @ 20A, 18V
- Vgs (Max) +22V, -8V
- Gate Charge (Qg) (Max) @ Vgs 108 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 2740 pF @ 1000 V