GCMX010B120S1-E1

GCMX010B120S1-E1

Part Number: GCMX010B120S1-E1
Product Classification: Single FETs, MOSFETs
Manufacturer: SemiQ
Description: 1200V, 10M SIC MOSFET MODULE, SO
Packaging: Tube
ROHS Status: Yes
Currency: -
PDF: Documents

Specification

  • Part Status Active
  • Mounting Type Chassis Mount
  • FET Type N-Channel
  • FET Feature -
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Grade -
  • Qualification -
  • Package / Case SOT-227-4, miniBLOC
  • Supplier Device Package SOT-227
  • Drain to Source Voltage (Vdss) 1200 V
  • Drive Voltage (Max Rds On, Min Rds On) 20V
  • Technology SiC (Silicon Carbide Junction Transistor)
  • Current - Continuous Drain (Id) @ 25°C 204A (Tc)
  • Vgs (Max) +25V, -10V
  • Power Dissipation (Max) 652W (Tc)
  • Rds On (Max) @ Id, Vgs 14mOhm @ 100A, 20V
  • Vgs(th) (Max) @ Id 4V @ 40mA
  • Gate Charge (Qg) (Max) @ Vgs 418 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds 10864 pF @ 1000 V